Ferroelectricity in Si-doped HfO2 revealed: A binary lead-free ferroelectric

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Dominik Martin - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Johannes Müller - , Fraunhofer Institute for Photonic Microsystems (Author)
  • Tony Schenk - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas M Arruda - , Oak Ridge National Laboratory (Author)
  • Amit Kumar - , Oak Ridge National Laboratory (Author)
  • Evgheni Strelcov - , Oak Ridge National Laboratory (Author)
  • Ekaterina Yurchuk - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Müller - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Darius Pohl - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Uwe Schröder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Sergei V. Kalinin - , Oak Ridge National Laboratory (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)8198-8202
Number of pages5
JournalAdvanced materials
Volume26
Issue number48
Publication statusPublished - 2014
Peer-reviewedYes

External IDs

Scopus 84914690571
Bibtex martin2014ferroelectricity
ORCID /0000-0003-3814-0378/work/142256114
ORCID /0000-0002-4859-4325/work/163295210