Ferroelectric Tunneling Junctions for Edge Computing

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Erika Covi - (Author)
  • Quang T. Duong - (Author)
  • Suzanne Lancaster - (Author)
  • Viktor Havel - (Author)
  • Jean Coignus - (Author)
  • Justine Barbot - (Author)
  • Ole Richter - (Author)
  • Philip Klein - (Author)
  • Elisabetta Chicca - (Author)
  • Laurent Grenouillet - (Author)
  • Athanasios Dimoulas - (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics (Author)
  • Stefan Slesazeck - (Author)

Abstract

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

Details

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (print)978-1-7281-9201-7
Publication statusPublished - 2021
Peer-reviewedYes

Publication series

SeriesIEEE International Symposium on Circuits and Systems (ISCAS)
ISSN0271-4302

External IDs

Scopus 85109004841
ORCID /0000-0003-3814-0378/work/142256365

Keywords

ASJC Scopus subject areas

Keywords

  • FTJ, edge computing, ferroelectric tunneling junction, Ferroelectric tunneling junction, Edge computing