Ferroelectric Tunneling Junctions for Edge Computing

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Beitragende

  • Erika Covi - (Autor:in)
  • Quang T. Duong - (Autor:in)
  • Suzanne Lancaster - (Autor:in)
  • Viktor Havel - (Autor:in)
  • Jean Coignus - (Autor:in)
  • Justine Barbot - (Autor:in)
  • Ole Richter - (Autor:in)
  • Philip Klein - (Autor:in)
  • Elisabetta Chicca - (Autor:in)
  • Laurent Grenouillet - (Autor:in)
  • Athanasios Dimoulas - (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik (Autor:in)
  • Stefan Slesazeck - (Autor:in)

Abstract

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

Details

OriginalspracheEnglisch
Titel2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)978-1-7281-9201-7
PublikationsstatusVeröffentlicht - 2021
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE International Symposium on Circuits and Systems (ISCAS)
ISSN0271-4302

Externe IDs

Scopus 85109004841
ORCID /0000-0003-3814-0378/work/142256365

Schlagworte

ASJC Scopus Sachgebiete

Schlagwörter

  • FTJ, edge computing, ferroelectric tunneling junction, Ferroelectric tunneling junction, Edge computing