Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf(0.5)Zro(0.5)O(2) /Al2O3 Capacitor Stacks

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Contributors

Details

Original languageEnglish
Title of host publication2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
Pages142-145
Publication statusPublished - 2018
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/142256133

Keywords

Keywords

  • ferroelectric tunnel junction, Hf1-xZrxO2, memory