Ferroelectric Hf1-xZrxO2 Memories: Device Reliability and Depolarization Fields

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Patrick D. Lomenzo - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Michael Hoffmann - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Benjamin Max - , Work Group Cool Silicon, Chair of Nanoelectronics (Author)

Details

Original languageEnglish
Title of host publication2019 19th Non-Volatile Memory Technology Symposium (NVMTS), Durham, NC, USA
Pages1-8
Publication statusPublished - 2019
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/142256130
Scopus 85083718017

Keywords

Keywords

  • FRAM, Depolarization, Retention, Wake-up, Memory Reliability