Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 340–346 |
| Number of pages | 7 |
| Journal | MRS bulletin |
| Volume | 43 |
| Publication status | Published - 2018 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 85047358653 |
|---|