Ferroelectric hafnium oxide
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
In this paper the potential of hafnium oxide as a CMOS-compatible ferroelectric for future memory applications is assessed. The high coercive field strength of ferroelectric hafnium oxide is identified as a key parameter being crucial to device performance. It provides the unique thickness and lateral scaling potential of this novel ferroelectric, while at the same time compromises its endurance properties due to large switching fields. Considering the ambivalent nature of this parameter as well as the emerging trade-off between retention and endurance, voltage controlled operation modes and different device concepts for ferroelectric hafnium oxide are discussed.
Details
Original language | English |
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Title of host publication | 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (electronic) | 978-1-4799-4202-2 |
ISBN (print) | 978-1-4799-4203-9 |
Publication status | Published - 13 Mar 2015 |
Peer-reviewed | Yes |
Publication series
Series | Annual Non-Volatile Memory Technology Symposium Proceedings (NVMTS) |
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Conference
Title | 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 |
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Duration | 27 - 29 October 2014 |
City | Jeju Island |
Country | Korea, Republic of |
External IDs
ORCID | /0000-0003-3814-0378/work/142256286 |
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