Ferroelectric field-effect transistors based on HfO2: a review
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO2), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation principles, switching mechanisms, device types, material properties and array structures. Key device performance metrics such as cycling endurance, retention, memory window, multi-level operation and scaling capability are analyzed. We also briefly survey recent developments in alternative applications for FeFETs including neuromorphic and in-memory computing as well as radiofrequency devices.
Details
Original language | Undefined |
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Article number | 502002 |
Journal | Nanotechnology |
Volume | 32 |
Issue number | 50 |
Publication status | Published - 10 Dec 2021 |
Peer-reviewed | Yes |
External IDs
Scopus | 85116497856 |
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