Ferroelectric field-effect transistors based on HfO2: a review
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | Undefined |
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Journal | Nanotechnology |
Volume | 32 |
Issue number | 50 |
Publication status | Published - 10 Dec 2021 |
Peer-reviewed | Yes |
External IDs
Scopus | 85116497856 |
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