Ferroelectric FETs With 20-nm-Thick HfO₂ Layer for Large Memory Window and High Performance
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 3828-3833 |
| Number of pages | 6 |
| Journal | IEEE transactions on electron devices : ED |
| Volume | 66 |
| Issue number | 9 |
| Publication status | Published - 2019 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 85071272154 |
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