ESD issues in compound semiconductor high-frequency devices and circuits
Research output: Contribution to journal › Research article › Invited › peer-review
Contributors
Abstract
The need of ESD protection for high frequency devices and circuits is underlined by reviewing the compound semiconductor material properties with emphasis on ESD stress and by collecting their ESD failure thresholds. Basic requirements for possible ESD protection structures in the microwave frequency regime are discussed and possible ESD protection devices and circuit concepts are proposed.
Details
Original language | English |
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Pages (from-to) | 1781-1793 |
Number of pages | 13 |
Journal | Microelectronics Reliability |
Volume | 38 |
Issue number | 11 |
Publication status | Published - 1998 |
Peer-reviewed | Yes |
Externally published | Yes |
External IDs
ORCID | /0000-0002-0757-3325/work/139064985 |
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Keywords
ASJC Scopus subject areas
Keywords
- Compound semiconductor, Electrostatic discharge, ESD, Failure mechanisms, Failure threshold, Field emission, High-frequency, Integrated circuits, Microelectronics, Microwave, MMIC, OEIC, Optoelectronics, Protection, Sensitivity