ESD issues in compound semiconductor high-frequency devices and circuits

Research output: Contribution to journalResearch articleInvitedpeer-review

Contributors

  • K. Bock - , Interuniversitair Micro-Elektronica Centrum (Author)

Abstract

The need of ESD protection for high frequency devices and circuits is underlined by reviewing the compound semiconductor material properties with emphasis on ESD stress and by collecting their ESD failure thresholds. Basic requirements for possible ESD protection structures in the microwave frequency regime are discussed and possible ESD protection devices and circuit concepts are proposed.

Details

Original languageEnglish
Pages (from-to)1781-1793
Number of pages13
JournalMicroelectronics Reliability
Volume38
Issue number11
Publication statusPublished - 1998
Peer-reviewedYes
Externally publishedYes

External IDs

ORCID /0000-0002-0757-3325/work/139064985

Keywords

Keywords

  • Compound semiconductor, Electrostatic discharge, ESD, Failure mechanisms, Failure threshold, Field emission, High-frequency, Integrated circuits, Microelectronics, Microwave, MMIC, OEIC, Optoelectronics, Protection, Sensitivity