Enhanced Electrical Properties of Optimized Vertical Graphene-Base Hot Electron Transistors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
The arrival of high-mobility two-dimensional materials like graphene leads to the renaissance of former vertical semiconductor-metal-semiconductor (SMS) hot electron transistors. Because of the monolayer thickness of graphene, improved SMS transistors with a semimetallic graphene-base electrode are now feasible for high-frequency applications. In this study we report about a device that consists of amorphous silicon, graphene, and crystalline silicon. For the first time, this device is fabricated by a four-mask lithography process which leads to significant improvements in the device performance. A strongly increased common-emitter current gain of 2% could be achieved while the on-off ratio improved to 1.6 × 105, which is already higher than predicted theoretically. This could be mainly attributed to better interface characteristics and decreased lateral dimensions of the devices. A cutoff frequency of approximately 26 MHz could be forecasted based on the DC measurements of the device.
Details
Original language | English |
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Pages (from-to) | 1670–1675 |
Number of pages | 6 |
Journal | ACS applied electronic materials |
Volume | 5 |
Issue number | 3 |
Publication status | Accepted/In press - 2022 |
Peer-reviewed | Yes |
Keywords
ASJC Scopus subject areas
Keywords
- amorphous silicon, graphene, heterojunction, high frequency, hot electron transistor, transistor, VHF-PECVD