Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Y. Raffel - , Fraunhofer Institute for Photonic Microsystems (Author)
  • R. Olivo - , Fraunhofer Institute for Photonic Microsystems (Author)
  • M. Lederer - , Chair of Experimental Physics / Photophysics, Institute of Applied Physics, Fraunhofer Institute for Photonic Microsystems (Author)
  • F. Muller - , Fraunhofer Institute for Photonic Microsystems (Author)
  • R. Hoffmann - , Fraunhofer Institute for Photonic Microsystems (Author)
  • T. Ali - , Fraunhofer Institute for Photonic Microsystems (Author)
  • K. Mertens - , Fraunhofer Institute for Photonic Microsystems (Author)
  • L. Pirro - , Global Foundries, Inc. (Author)
  • M. Drescher - , Institute of Semiconductors and Microsystems, Fraunhofer Institute for Photonic Microsystems (Author)
  • S. Beyer - , Fraunhofer Institute for Photonic Microsystems (Author)
  • T. Kampfe - , Fraunhofer Institute for Photonic Microsystems (Author)
  • K. Seidel - , Fraunhofer Institute for Photonic Microsystems (Author)
  • L. M. Eng - , Chair of Experimental Physics / Photophysics, TUD Dresden University of Technology (Author)
  • J. Heitmann - , Freiberg University of Mining and Technology (Author)

Abstract

HfO2-based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging. Here, a fluorination treatment is presented that enables significant endurance and device stability improvement. Noise and charge pumping methods are applied to obtain deeper understanding of the underlying defect interaction in FeFETs.

Details

Original languageEnglish
Title of host publication2022 IEEE International Memory Workshop (IMW)
Place of PublicationDresden
ISBN (electronic)978-1-6654-9947-7
Publication statusPublished - 2022
Peer-reviewedYes

Publication series

SeriesIEEE International Memory Workshop (IMW)
ISSN2330-7978

Workshop

Title14th IEEE International Memory Workshop
Abbreviated titleIMW 2022
Conference number14
Duration15 - 18 March 2022
CityDresden
CountryGermany

External IDs

ORCID /0000-0002-2484-4158/work/142257599

Keywords

ASJC Scopus subject areas

Keywords

  • Charge Pumping, FeFET, Flicker Noise, Hafnium Oxide, Interface Traps, Interface Treatments

Library keywords