Electrical stress on thin film TaN resistive structures

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Detlef Bonfert - , Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT) (Author)
  • Horst Gieser - , Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT) (Author)
  • Karlheinz Bock - , Chair of Electronic Packaging Technology, Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), Technical University of Munich (Author)
  • Paul Svasta - , Polytechnic University of Bucharest (Author)
  • Ciprian Ionescu - , Polytechnic University of Bucharest (Author)

Abstract

Tantalum nitride thin films (TaNx) are mechanically hard, self-passivated and corrosion - resistive layers, often used for precise thin film resistors. In order to investigate the behavior at high current densities, a DC- and a pulsed measurement technique was applied to the film resistive structures. The analysis is made on TaNx thin film resistors on silicon substrates, with applied DC- and pulsed stress, showing the behavior before, during and after stressing. Permanent Changes or destruction of the resistive layer can occur.

Details

Original languageGerman
Title of host publication2011 IEEE 17th International Symposium for Design and Technology in Electronic Packaging (SIITME)
PublisherIEEE
Pages313-318
Number of pages6
ISBN (print)978-1-4577-1275-3
Publication statusPublished - 23 Oct 2011
Peer-reviewedYes

Conference

Title2011 IEEE 17th International Symposium for Design and Technology in Electronic Packaging (SIITME)
Duration20 - 23 October 2011
LocationTimisoara, Romania

External IDs

Scopus 84855774237
ORCID /0000-0002-0757-3325/work/139064843

Keywords

Keywords

  • Resistors, Resistance, Current measurement, Electrical resistance measurement, Silicon, Transmission line measurements, Stress