Electrical stress on thin film TaN resistive structures
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Tantalum nitride thin films (TaNx) are mechanically hard, self-passivated and corrosion - resistive layers, often used for precise thin film resistors. In order to investigate the behavior at high current densities, a DC- and a pulsed measurement technique was applied to the film resistive structures. The analysis is made on TaNx thin film resistors on silicon substrates, with applied DC- and pulsed stress, showing the behavior before, during and after stressing. Permanent Changes or destruction of the resistive layer can occur.
Details
Originalsprache | Deutsch |
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Titel | 2011 IEEE 17th International Symposium for Design and Technology in Electronic Packaging (SIITME) |
Herausgeber (Verlag) | IEEE |
Seiten | 313-318 |
Seitenumfang | 6 |
ISBN (Print) | 978-1-4577-1275-3 |
Publikationsstatus | Veröffentlicht - 23 Okt. 2011 |
Peer-Review-Status | Ja |
Konferenz
Titel | 2011 IEEE 17th International Symposium for Design and Technology in Electronic Packaging (SIITME) |
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Dauer | 20 - 23 Oktober 2011 |
Ort | Timisoara, Romania |
Externe IDs
Scopus | 84855774237 |
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ORCID | /0000-0002-0757-3325/work/139064843 |
Schlagworte
Schlagwörter
- Resistors, Resistance, Current measurement, Electrical resistance measurement, Silicon, Transmission line measurements, Stress