Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 65-68 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 88 |
| Publication status | Published - 2013 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84885019263 |
|---|