Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3 and HfO2 on AlGaN/GaN heterostructure capacitors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
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| Article number | 124106 |
| Journal | Journal of applied physics |
| Volume | 118 |
| Issue number | 12 |
| Publication status | Published - 25 Sept 2015 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84942543476 |
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