In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO2 and embedded in GlobalFoundries 28 nm bulk high- ${k}$ metal gate (HKMG) technology (28SLPe) are systematically investigated and compared to their n-type counterparts. We show that the two device types, based on Si channel, exhibit a symmetric memory window (MW) and very similar switching behavior, yet profoundly different trapping kinetics. In contrast to n-FeFETs, p-FeFETs display a full MW immediately after the write operation and apparently no parasitic electron trapping. Based on this, we demonstrate an immediate read-after-write operation. Finally, we illustrate how slight structural changes of the gate stack, such as the introduction of the SiGe channel material, can enhance charge trapping and nullify the above-mentioned advantages.