Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures

Research output: Contribution to journalResearch articleContributedpeer-review

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Original languageEnglish
Article number125018
JournalAIP advances
Volume9
Issue number12
Publication statusPublished - 1 Dec 2019
Peer-reviewedYes

External IDs

Scopus 85076917246

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