Correlating yellow and blue luminescence with carbon doping in GaN

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • S. Schmult - , Chair of Nanoelectronics (Author)
  • H. Schürmann - , Otto von Guericke University Magdeburg (Author)
  • G. Schmidt - , Otto von Guericke University Magdeburg (Author)
  • P. Veit - , Otto von Guericke University Magdeburg (Author)
  • F. Bertram - , Otto von Guericke University Magdeburg (Author)
  • J. Christen - , Otto von Guericke University Magdeburg (Author)
  • A. Großer - , TUD Dresden University of Technology (Author)
  • T. Mikolajick - , Chair of Nanoelectronics (Author)

Abstract

Blue and yellow emission bands in carbon-doped GaN grown by MBE were investigated in low-temperature cathodoluminescence measurements performed in a scanning transmission electron microscope (STEM-CL) with high spatial resolution. Blue luminescence at 2.85 eV and two contributions in the spectral range of the yellow emission band around 2.2 eV separated by 120 meV are observed in carbon-doped material, whereas only one distinctive yellow luminescence contribution was found in unintentionally-doped GaN.

Details

Original languageEnglish
Article number126634
Number of pages4
JournalJournal of crystal growth
Volume586
Publication statusE-pub ahead of print - 16 May 2022
Peer-reviewedYes

External IDs

unpaywall 10.1016/j.jcrysgro.2022.126634
WOS 000793642600002
ORCID /0000-0003-3814-0378/work/142256163

Keywords

DFG Classification of Subject Areas according to Review Boards

Keywords

  • A1. Carbon-doping, A1. High resolution scanning transmission electron microscopy cathodoluminescence, A1. Impurities, A1. Interfaces, A3. Molecular beam epitaxy, B1. Nitrides, electron microscopy cathodoluminescence, B1, A1, Interfaces, Nitrides, A3, High resolution scanning transmission, Impurities, Carbon-doping, Molecular beam epitaxy, Electron microscopy cathodoluminescence