Correlating yellow and blue luminescence with carbon doping in GaN

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • S. Schmult - , Professur für Nanoelektronik (Autor:in)
  • H. Schürmann - , Otto-von-Guericke-Universität Magdeburg (Autor:in)
  • G. Schmidt - , Otto-von-Guericke-Universität Magdeburg (Autor:in)
  • P. Veit - , Otto-von-Guericke-Universität Magdeburg (Autor:in)
  • F. Bertram - , Otto-von-Guericke-Universität Magdeburg (Autor:in)
  • J. Christen - , Otto-von-Guericke-Universität Magdeburg (Autor:in)
  • A. Großer - , Technische Universität Dresden (Autor:in)
  • T. Mikolajick - , Professur für Nanoelektronik (Autor:in)

Abstract

Blue and yellow emission bands in carbon-doped GaN grown by MBE were investigated in low-temperature cathodoluminescence measurements performed in a scanning transmission electron microscope (STEM-CL) with high spatial resolution. Blue luminescence at 2.85 eV and two contributions in the spectral range of the yellow emission band around 2.2 eV separated by 120 meV are observed in carbon-doped material, whereas only one distinctive yellow luminescence contribution was found in unintentionally-doped GaN.

Details

OriginalspracheEnglisch
Aufsatznummer126634
Seitenumfang4
FachzeitschriftJournal of crystal growth
Jahrgang586
PublikationsstatusElektronische Veröffentlichung vor Drucklegung - 16 Mai 2022
Peer-Review-StatusJa

Externe IDs

unpaywall 10.1016/j.jcrysgro.2022.126634
WOS 000793642600002
ORCID /0000-0003-3814-0378/work/142256163

Schlagworte

Schlagwörter

  • A1. Carbon-doping, A1. High resolution scanning transmission electron microscopy cathodoluminescence, A1. Impurities, A1. Interfaces, A3. Molecular beam epitaxy, B1. Nitrides, electron microscopy cathodoluminescence, B1, A1, Interfaces, Nitrides, A3, High resolution scanning transmission, Impurities, Carbon-doping, Molecular beam epitaxy, Electron microscopy cathodoluminescence