Correction to Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering: (Advanced Materials Interfaces, (1900042), 10.1002/admi.201900042)

Research output: Contribution to specialist publicationCorrections (errata and retractions)peer-review

Contributors

  • Terence Mittmann - , Chair of Nanoelectronics (Author)
  • Monica Materano - , Chair of Nanoelectronics (Author)
  • Patrick D. Lomenzo - (Author)
  • Min Hyuk Park - (Author)
  • Igor Stolichnov - (Author)
  • Matteo Cavalieri - (Author)
  • Chuanzhen Zhou - (Author)
  • Ching Chang Chung - (Author)
  • Jacob L. Jones - (Author)
  • Thomas Szyjka - (Author)
  • Martina Müller - (Author)
  • Alfred Kersch - (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, TUD Dresden University of Technology (Author)
  • Uwe Schroeder - (Author)

Abstract

Adv. Mater. Interfaces 2019, 6, 1900042 The captions of the Figures 2 and 3 were interchanged in the original manuscript. Please find the figures with the correct captions below. (Figure presented.) Number of cycles to break down HfO2 films as a function of film thickness and annealing temperature. Cycling was stopped after 108 electrical field cycles were reached. (Figure presented.) Thickness dependence of the double remanent polarization 2Pr of ALD and PVD HfO2-based metal–insulator–metal (MIM) capacitors.[17] The broken lines are guides to the eyes. The editorial office apologizes for any inconvenience or misunderstanding that this error may have caused.

Details

Original languageEnglish
Pages1901528
Volume6
Issue number20
JournalAdvanced materials interfaces
Publication statusPublished - 1 Oct 2019
Peer-reviewedYes
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External IDs

ORCID /0000-0003-3814-0378/work/142256232

Keywords