Correction to Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering: (Advanced Materials Interfaces, (1900042), 10.1002/admi.201900042)
Research output: Contribution to specialist publication › Corrections (errata and retractions) › peer-review
Contributors
Abstract
Adv. Mater. Interfaces 2019, 6, 1900042 The captions of the Figures 2 and 3 were interchanged in the original manuscript. Please find the figures with the correct captions below. (Figure presented.) Number of cycles to break down HfO2 films as a function of film thickness and annealing temperature. Cycling was stopped after 108 electrical field cycles were reached. (Figure presented.) Thickness dependence of the double remanent polarization 2Pr of ALD and PVD HfO2-based metal–insulator–metal (MIM) capacitors.[17] The broken lines are guides to the eyes. The editorial office apologizes for any inconvenience or misunderstanding that this error may have caused.
Details
| Original language | English |
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| Pages | 1901528 |
| Volume | 6 |
| Issue number | 20 |
| Journal | Advanced materials interfaces |
| Publication status | Published - 1 Oct 2019 |
| Peer-reviewed | Yes |
External IDs
| ORCID | /0000-0003-3814-0378/work/142256232 |
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