Control of rectifying and resistive switching behavior in BiFeO3 thin films

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Yao Shuai - , Helmholtz-Zentrum Dresden-Rossendorf, University of Electronic Science and Technology of China (Author)
  • Shengqiang Zhou - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Chuangui Wu - , University of Electronic Science and Technology of China (Author)
  • Wanli Zhang - , University of Electronic Science and Technology of China (Author)
  • Danilo Bürger - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Manfred Helm - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Heidemarie Schmidt - , Helmholtz-Zentrum Dresden-Rossendorf (Author)

Abstract

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ∼4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.

Details

Original languageEnglish
Article number095802
JournalApplied physics express
Volume4
Issue number9
Publication statusPublished - 7 Nov 2011
Peer-reviewedYes
Externally publishedYes

External IDs

ORCID /0000-0003-3814-0378/work/155840900

Keywords

ASJC Scopus subject areas