Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Reconfigurable field-effect transistors come with an additional gate contact, which leads to challenges for compact modeling. In this work, a closed-form and physics-based DC model is derived for those devices, which combines the injection current over the Schottky barriers with the resistance-effects of partially ungated device channel segments or long channel devices. The model verification is done by comparing the results to TCAD simulations and measurements.
Details
Original language | English |
---|---|
Title of host publication | 2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) |
Pages | 33-39 |
Number of pages | 7 |
Volume | 2022 |
ISBN (electronic) | 978-83-63578-22-0 |
Publication status | Published - 23 Jun 2022 |
Peer-reviewed | Yes |
Publication series
Series | International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES) |
---|
Conference
Title | 29th International Conference on Mixed Design of Integrated Circuits and System, MIXDES 2022 |
---|---|
Duration | 23 - 24 June 2022 |
City | Wroclaw |
Country | Poland |
External IDs
unpaywall | 10.23919/mixdes55591.2022.9838216 |
---|---|
dblp | conf/mixdes/RoemerDSTSHMWIK22 |
ORCID | /0000-0003-3814-0378/work/142256357 |
Keywords
Research priority areas of TU Dresden
ASJC Scopus subject areas
Keywords
- channel resistance, closed-form, compact modeling, field emission, RFET, SBFET, Schottky barrier, thermionic emission, tunneling current