Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Reconfigurable field-effect transistors come with an additional gate contact, which leads to challenges for compact modeling. In this work, a closed-form and physics-based DC model is derived for those devices, which combines the injection current over the Schottky barriers with the resistance-effects of partially ungated device channel segments or long channel devices. The model verification is done by comparing the results to TCAD simulations and measurements.
Details
Originalsprache | Englisch |
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Titel | 2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) |
Seiten | 33-39 |
Seitenumfang | 7 |
Band | 2022 |
ISBN (elektronisch) | 978-83-63578-22-0 |
Publikationsstatus | Veröffentlicht - 23 Juni 2022 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES) |
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Konferenz
Titel | 29th International Conference on Mixed Design of Integrated Circuits and System, MIXDES 2022 |
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Dauer | 23 - 24 Juni 2022 |
Stadt | Wroclaw |
Land | Polen |
Externe IDs
unpaywall | 10.23919/mixdes55591.2022.9838216 |
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dblp | conf/mixdes/RoemerDSTSHMWIK22 |
ORCID | /0000-0003-3814-0378/work/142256357 |
Schlagworte
Forschungsprofillinien der TU Dresden
ASJC Scopus Sachgebiete
Schlagwörter
- channel resistance, closed-form, compact modeling, field emission, RFET, SBFET, Schottky barrier, thermionic emission, tunneling current