Charge-Trapping Phenomena in HfO2 -Based FeFET-Type Nonvolatile Memories

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • E. Yurchuk - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • J. Muller - , Fraunhofer Institute for Photonic Microsystems (Author)
  • S. Muller - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • J. Paul - , Fraunhofer Institute for Photonic Microsystems (Author)
  • M. Pesic - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • R. Van Bentum - , Global Foundries Dresden (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)3501 - 3507
Number of pages7
JournalIEEE transactions on electron devices : ED
Volume63
Issue number9
Publication statusPublished - 22 Jul 2016
Peer-reviewedYes

External IDs

Scopus 84979293996

Keywords