Charge-Trapping Phenomena in HfO <inf>2</inf> -Based FeFET-Type Nonvolatile Memories
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
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| Pages (from-to) | 3501 - 3507 |
| Number of pages | 7 |
| Journal | IEEE transactions on electron devices : ED |
| Volume | 63 |
| Issue number | 9 |
| Publication status | Published - 22 Jul 2016 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84979293996 |
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