Channel length dependent sensor response of Schottky-barrier FET pH sensors

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

Abstract

We present a multi channel Schottky-barrier (SB) field effect transistor (FET) based platform for chemical sensor applications and investigate its sensitivity on channel length. Designed transistors consist of parallel assembled bottom up grown silicon nanowires with a mean diameter of 20 nm. Focusing on investigations of devices with different channel lengths, we demonstrate that different optimum sensing regimes exist and they are determined by the device geometry. These target at different realizations and operation schemes. The sensitivities of the SB-FETs in linear and subthreshold regime are extracted from analysis of the pH response of silicon nanowire sensor devices.

Details

Original languageEnglish
Title of host publicationSENSORS, 2013 IEEE
PublisherIEEE Xplore
ISBN (electronic)978-1-4673-4642-9
Publication statusPublished - 2013
Peer-reviewedYes

Publication series

SeriesIEEE SENSORS
ISSN1930-0395

Conference

Title12th IEEE SENSORS 2013 Conference
Duration4 - 6 November 2013
CityBaltimore, MD
CountryUnited States of America

External IDs

ORCID /0000-0003-3814-0378/work/142256349

Keywords

ASJC Scopus subject areas