Channel length dependent sensor response of Schottky-barrier FET pH sensors
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
We present a multi channel Schottky-barrier (SB) field effect transistor (FET) based platform for chemical sensor applications and investigate its sensitivity on channel length. Designed transistors consist of parallel assembled bottom up grown silicon nanowires with a mean diameter of 20 nm. Focusing on investigations of devices with different channel lengths, we demonstrate that different optimum sensing regimes exist and they are determined by the device geometry. These target at different realizations and operation schemes. The sensitivities of the SB-FETs in linear and subthreshold regime are extracted from analysis of the pH response of silicon nanowire sensor devices.
Details
Originalsprache | Englisch |
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Titel | SENSORS, 2013 IEEE |
Herausgeber (Verlag) | IEEE Xplore |
ISBN (elektronisch) | 978-1-4673-4642-9 |
Publikationsstatus | Veröffentlicht - 2013 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | IEEE SENSORS |
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ISSN | 1930-0395 |
Konferenz
Titel | 12th IEEE SENSORS 2013 Conference |
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Dauer | 4 - 6 November 2013 |
Stadt | Baltimore, MD |
Land | USA/Vereinigte Staaten |
Externe IDs
ORCID | /0000-0003-3814-0378/work/142256349 |
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