Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells
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Contributors
Abstract
The phonon-assisted emission of GaAs 1 xBi x quantum wells with Bi concentrations up to x=0.055 is investigated by continuous-wave photoluminescence as a function of lattice temperature and excitation density. Strong carrier-phonon coupling is observed manifesting itself in a Huang-Rhys factor of up to 0.3 depending on the lattice temperature and Bi content. Carriers bound to Bi-clusters are identified to be the origin of the efficient carrier-phonon scattering.
Details
Original language | English |
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Article number | 085012 |
Journal | Semiconductor science and technology |
Volume | 27 |
Issue number | 8 |
Publication status | Published - Aug 2012 |
Peer-reviewed | Yes |
Externally published | Yes |