Capacitive coupled TLP (CC-TLP) and the correlation with the CDM

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Heinrich Wolf - , Fraunhofer Institute for Reliability and Microintegration (Author)
  • Horst Gieser - , Fraunhofer Institute for Reliability and Microintegration (Author)
  • Karlheinz Bock - , Chair of Electronic Packaging Technology, Fraunhofer Institute for Reliability and Microintegration (Author)
  • Agha Jahanzeb - , Texas Instruments (Author)
  • Charvaka Duvvury - , Texas Instruments (Author)
  • Yen-Yi Lin - , Texas Instruments (Author)

Abstract

Capacitive Coupled Transmission Line Pulsing (CC-TLP) has successfully identified a known CDM weakness at the RF inputs of two different 90 nm CMOS RF products. The presented study compares electrical and physical failure signatures for packaged devices and even for devices stressed at wafer level. The peak stress currents resulting in a failure as well as the failure signatures correlate very well for CDM and CC-TLP. The results also support the application of a single stress per pin with the potential to save many hours of test time without loosing confidence.

Details

Original languageGerman
Title of host publication2009 31st EOS/ESD Symposium
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-8
Number of pages8
ISBN (print)978-1-58537-176-1
Publication statusPublished - 4 Sept 2009
Peer-reviewedYes

Conference

Title2009 31st EOS/ESD Symposium
Duration30 August - 4 September 2009
LocationAnaheim, CA, USA

External IDs

ORCID /0000-0002-0757-3325/work/139064832

Keywords

Keywords

  • Stress, Circuit testing, Packaging, Wafer scale integration, CMOS technology, Protection, Electrostatic discharge, Capacitance, Transmission lines, Radio frequency