Capacitive coupled TLP (CC-TLP) and the correlation with the CDM
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Capacitive Coupled Transmission Line Pulsing (CC-TLP) has successfully identified a known CDM weakness at the RF inputs of two different 90 nm CMOS RF products. The presented study compares electrical and physical failure signatures for packaged devices and even for devices stressed at wafer level. The peak stress currents resulting in a failure as well as the failure signatures correlate very well for CDM and CC-TLP. The results also support the application of a single stress per pin with the potential to save many hours of test time without loosing confidence.
Details
Originalsprache | Deutsch |
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Titel | 2009 31st EOS/ESD Symposium |
Herausgeber (Verlag) | IEEE |
Seiten | 1-8 |
Seitenumfang | 8 |
ISBN (Print) | 978-1-58537-176-1 |
Publikationsstatus | Veröffentlicht - 4 Sept. 2009 |
Peer-Review-Status | Ja |
Konferenz
Titel | 2009 31st EOS/ESD Symposium |
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Dauer | 30 August - 4 September 2009 |
Ort | Anaheim, CA, USA |
Externe IDs
ORCID | /0000-0002-0757-3325/work/139064832 |
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Schlagworte
Schlagwörter
- Stress, Circuit testing, Packaging, Wafer scale integration, CMOS technology, Protection, Electrostatic discharge, Capacitance, Transmission lines, Radio frequency