Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • M. Pesic - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • M. Hoffmann - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • C. Richter - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • T. Mikolajick - , Chair of Nanoelectronics (Author)

Details

Original languageEnglish
Title of host publication2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings
Number of pages4
ISBN (electronic)978-1-5386-0477-9
Publication statusPublished - 2017
Peer-reviewedYes

External IDs

Scopus 85043240193

Keywords