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Analysis of Vth variability in NbOx-based threshold switches

Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review

Contributors

Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
Melanie Herzig - , Chair of Nanoelectronics (Author)
Thomas Mikolajick - , Chair of Nanoelectronics (Author)
Martin Weiher - , Chair of Fundamentals of Electrical Engineering (Author)
Alon Ascoli - , Chair of Fundamentals of Electrical Engineering (Author)
Ronald Tetzlaff - , Chair of Fundamentals of Electrical Engineering (Author)

Details

Original language	English
Title of host publication	2016 16th Non-Volatile Memory Technology Symposium (NVMTS)
Pages	1-5
Publication status	Published - 2016
Peer-reviewed	Yes

External IDs

Scopus	85010773968
ORCID	/0000-0001-7436-0103/work/142240360
ORCID	/0000-0003-1830-0370/work/142241791
ORCID	/0000-0003-3814-0378/work/142256243

Keywords

Keywords

Niobium oxide, negative differential resistance, threshold switching