An overview of twin-flash™ technology
Research output: Contribution to conferences › Paper › Contributed › peer-review
Contributors
Abstract
The twin-flash cell technology relies on the charge trapping storage concept. The concept is described. The fabrication of the technology nodes ranges from 170 nm to 90 nm. The realization of the concept in different cell types is described. The shrink path beyond the 40 nm node is shown and discussed.
Details
| Original language | English |
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| Pages | 5-10 |
| Number of pages | 6 |
| Publication status | Published - 2005 |
| Peer-reviewed | Yes |
| Externally published | Yes |
Conference
| Title | 2005 Non-Volatile Memory Technology Symposium, NVMTS05 |
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| Duration | 7 - 10 November 2005 |
| City | Dallas, TX |
| Country | United States of America |
External IDs
| ORCID | /0000-0003-3814-0378/work/156338413 |
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Keywords
ASJC Scopus subject areas
Keywords
- Channel hot electron injection, Hot hole injection, Multi bit storage, Trapped charge storage devices, Twin-Flash