An Analog Memristive and Memcapacitive Device for Neuromorphic Computing
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
A NbOx and Al2O3 bilayer metal-insulator-metal structure features capacitive state change together with gradual, non-filamentary resistive switching. The reported device offers several benefits, including no need for electroforming and intrinsic current compliance. These features are highly attractive for neuromorphic computing applications, where biological plasticity can be emulated by not only memristance but also memcapacitance of the device. To investigate the capability of a Ti/Al2O3/NbOx/Ti stack to produce the behavior necessary for mimicking the functionality of neurons or synapses, its dynamic response is studied in detail by means of pulsed I-V and C-V measurements. Additionally, the correlation between the capacitive and the memristive state change in the stack is discussed.
Details
Original language | English |
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Title of host publication | 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
Place of Publication | Glasgow |
Publisher | IEEE Xplore |
Pages | 1-4 |
ISBN (electronic) | 978-1-6654-8823-5 |
ISBN (print) | 978-1-6654-8824-2 |
Publication status | Published - 2022 |
Peer-reviewed | Yes |
Publication series
Series | IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
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Conference
Title | 29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022 |
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Duration | 24 - 26 October 2022 |
City | Glasgow |
Country | United Kingdom |
External IDs
dblp | conf/icecsys/MgeladzeHSTMS22 |
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ORCID | /0000-0001-7436-0103/work/142240364 |
ORCID | /0000-0003-3259-4571/work/142249668 |
ORCID | /0000-0003-3814-0378/work/142256251 |
Keywords
ASJC Scopus subject areas
Keywords
- analog switching in Al2O3/NbOx, bi-layer stack, depression, forming free, gradual, Interfacial, memcapacitance, memristance, potentiation, STP