An Analog Memristive and Memcapacitive Device for Neuromorphic Computing
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
A NbOx and Al2O3 bilayer metal-insulator-metal structure features capacitive state change together with gradual, non-filamentary resistive switching. The reported device offers several benefits, including no need for electroforming and intrinsic current compliance. These features are highly attractive for neuromorphic computing applications, where biological plasticity can be emulated by not only memristance but also memcapacitance of the device. To investigate the capability of a Ti/Al2O3/NbOx/Ti stack to produce the behavior necessary for mimicking the functionality of neurons or synapses, its dynamic response is studied in detail by means of pulsed I-V and C-V measurements. Additionally, the correlation between the capacitive and the memristive state change in the stack is discussed.
Details
Originalsprache | Englisch |
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Titel | 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
Erscheinungsort | Glasgow |
Herausgeber (Verlag) | IEEE Xplore |
Seiten | 1-4 |
ISBN (elektronisch) | 978-1-6654-8823-5 |
ISBN (Print) | 978-1-6654-8824-2 |
Publikationsstatus | Veröffentlicht - 2022 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
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Konferenz
Titel | 29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022 |
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Dauer | 24 - 26 Oktober 2022 |
Stadt | Glasgow |
Land | Großbritannien/Vereinigtes Königreich |
Externe IDs
dblp | conf/icecsys/MgeladzeHSTMS22 |
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ORCID | /0000-0001-7436-0103/work/142240364 |
ORCID | /0000-0003-3259-4571/work/142249668 |
ORCID | /0000-0003-3814-0378/work/142256251 |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- analog switching in Al2O3/NbOx, bi-layer stack, depression, forming free, gradual, Interfacial, memcapacitance, memristance, potentiation, STP