An Analog Memristive and Memcapacitive Device for Neuromorphic Computing

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

A NbOx and Al2O3 bilayer metal-insulator-metal structure features capacitive state change together with gradual, non-filamentary resistive switching. The reported device offers several benefits, including no need for electroforming and intrinsic current compliance. These features are highly attractive for neuromorphic computing applications, where biological plasticity can be emulated by not only memristance but also memcapacitance of the device. To investigate the capability of a Ti/Al2O3/NbOx/Ti stack to produce the behavior necessary for mimicking the functionality of neurons or synapses, its dynamic response is studied in detail by means of pulsed I-V and C-V measurements. Additionally, the correlation between the capacitive and the memristive state change in the stack is discussed.

Details

OriginalspracheEnglisch
Titel2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
ErscheinungsortGlasgow
Herausgeber (Verlag)IEEE Xplore
Seiten1-4
ISBN (elektronisch)978-1-6654-8823-5
ISBN (Print)978-1-6654-8824-2
PublikationsstatusVeröffentlicht - 2022
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE International Conference on Electronics, Circuits and Systems (ICECS)

Konferenz

Titel29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022
Dauer24 - 26 Oktober 2022
StadtGlasgow
LandGroßbritannien/Vereinigtes Königreich

Externe IDs

dblp conf/icecsys/MgeladzeHSTMS22
ORCID /0000-0001-7436-0103/work/142240364
ORCID /0000-0003-3259-4571/work/142249668
ORCID /0000-0003-3814-0378/work/142256251

Schlagworte

Schlagwörter

  • analog switching in Al2O3/NbOx, bi-layer stack, depression, forming free, gradual, Interfacial, memcapacitance, memristance, potentiation, STP