Reconfigurable field effect transistors (RFET) have the ability to toggle polarity between n- and p- conductance at runtime [1], [2]. The here presented multiple independent gate (MIG) RFET expands the device functionality by offering additional logical inputs, valuable for e.g. efficient XOR or majority gate implementations [3], [4] or the here originally presented multiplexer circuit. Moreover, for the first time with a top-down RFET approach equal ON-currents are obtained for every configuration while requiring only one supply voltage (V_DD).