A physics-based spice model for the Nb2O5 threshold switching memristor
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
In this work a physics-based spice model for the Nb2O5 volatile thermally-activated micro-scale threshold switching memristor is presented. The dynamic behavior of the spice model is adjusted by the adoption of a Pearson-Anson oscillator. In that way the value of the internal thermal capacitance of the memristors conducting filament can be attained. This value is not directly accessible by other physical measurements. The model might be used as the base for modeling a large variety of memristor devices exhibiting threshold switching and thermally induced abrupt memory switching.
Details
Original language | English |
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Title of host publication | CNNA 2016; 15th International Workshop on Cellular Nanoscale Networks and their Applications |
Editors | Ronald Tetzlaff |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 59-60 |
Number of pages | 2 |
ISBN (electronic) | 978-3-8007-4252-3 |
Publication status | Published - 2016 |
Peer-reviewed | Yes |
Publication series
Series | IEEE International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) |
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Volume | 2016-August |
ISSN | 2165-0160 |
Conference
Title | 15th International Workshop on Cellular Nanoscale Networks and Their Applications, CNNA 2016 |
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Duration | 23 - 25 August 2016 |
City | Dresden |
Country | Germany |
External IDs
ORCID | /0000-0001-7436-0103/work/142240365 |
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ORCID | /0000-0003-3814-0378/work/142256273 |
Keywords
ASJC Scopus subject areas
Keywords
- Niobium oxide, Spice model, Threshold switching