A physics-based spice model for the Nb2O5 threshold switching memristor
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
In this work a physics-based spice model for the Nb2O5 volatile thermally-activated micro-scale threshold switching memristor is presented. The dynamic behavior of the spice model is adjusted by the adoption of a Pearson-Anson oscillator. In that way the value of the internal thermal capacitance of the memristors conducting filament can be attained. This value is not directly accessible by other physical measurements. The model might be used as the base for modeling a large variety of memristor devices exhibiting threshold switching and thermally induced abrupt memory switching.
Details
Originalsprache | Englisch |
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Titel | CNNA 2016; 15th International Workshop on Cellular Nanoscale Networks and their Applications |
Redakteure/-innen | Ronald Tetzlaff |
Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
Seiten | 59-60 |
Seitenumfang | 2 |
ISBN (elektronisch) | 978-3-8007-4252-3 |
Publikationsstatus | Veröffentlicht - 2016 |
Peer-Review-Status | Ja |
Publikationsreihe
Reihe | IEEE International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) |
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Band | 2016-August |
ISSN | 2165-0160 |
Konferenz
Titel | 15th International Workshop on Cellular Nanoscale Networks and Their Applications, CNNA 2016 |
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Dauer | 23 - 25 August 2016 |
Stadt | Dresden |
Land | Deutschland |
Externe IDs
ORCID | /0000-0001-7436-0103/work/142240365 |
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ORCID | /0000-0003-3814-0378/work/142256273 |
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- Niobium oxide, Spice model, Threshold switching