A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
|---|---|
| Pages (from-to) | 1236–1256 |
| Number of pages | 21 |
| Journal | Journal of computational electronics |
| Volume | 16 |
| Publication status | Published - 2017 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 85028743057 |
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