A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • M. Pešić - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • C. Künneth - , Munich University of Applied Sciences (Author)
  • M. Hoffmann - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • H. Mulaosmanovic - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Müller - , Ferroelectric Memory GmbH (Author)
  • E.T. Breyer - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • A. Kersch - , Munich University of Applied Sciences (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)1236–1256
Number of pages21
JournalJournal of computational electronics
Volume16
Publication statusPublished - 2017
Peer-reviewedYes

External IDs

Scopus 85028743057