On the Safe Operating Area of InP HBTs
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
The safe-operating area of an advanced InP HBT technology is studied experimentally using pulsed, DC and RF as well as load-pull measurements. To study the implications of the results on circuit performance, a power amplifier cell is analyzed using HICUM/L2. Safe-operating-area related consequences for circuit design, technology development, compact modeling and device characterization are outlined.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
| Herausgeber (Verlag) | IEEE |
| Seiten | 290-293 |
| Seitenumfang | 4 |
| ISBN (Print) | 979-8-3315-4125-5 |
| Publikationsstatus | Veröffentlicht - 30 Okt. 2024 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
|---|---|
| Dauer | 27 - 30 Oktober 2024 |
| Ort | Fort Lauderdale, FL, USA |
Schlagworte
Schlagwörter
- Semiconductor device modeling, Radio frequency, Semiconductor device measurement, Pulse measurements, Power amplifiers, Heterojunction bipolar transistors, Integrated circuit modeling, III-V semiconductor materials, Indium phosphide, Load modeling