On the Safe Operating Area of InP HBTs
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
The safe-operating area of an advanced InP HBT technology is studied experimentally using pulsed, DC and RF as well as load-pull measurements. To study the implications of the results on circuit performance, a power amplifier cell is analyzed using HICUM/L2. Safe-operating-area related consequences for circuit design, technology development, compact modeling and device characterization are outlined.
Details
| Original language | English |
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| Title of host publication | 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
| Publisher | IEEE |
| Pages | 290-293 |
| Number of pages | 4 |
| ISBN (print) | 979-8-3315-4125-5 |
| Publication status | Published - 30 Oct 2024 |
| Peer-reviewed | Yes |
Conference
| Title | 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
|---|---|
| Duration | 27 - 30 October 2024 |
| Location | Fort Lauderdale, FL, USA |
Keywords
Keywords
- Semiconductor device modeling, Radio frequency, Semiconductor device measurement, Pulse measurements, Power amplifiers, Heterojunction bipolar transistors, Integrated circuit modeling, III-V semiconductor materials, Indium phosphide, Load modeling