On the Safe Operating Area of InP HBTs
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
The safe-operating area of an advanced InP HBT technology is studied experimentally using pulsed, DC and RF as well as load-pull measurements. To study the implications of the results on circuit performance, a power amplifier cell is analyzed using HICUM/L2. Safe-operating-area related consequences for circuit design, technology development, compact modeling and device characterization are outlined.
Details
| Original language | English |
|---|---|
| Title of host publication | 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 290-293 |
| Number of pages | 4 |
| ISBN (electronic) | 979-8-3315-4124-8 |
| ISBN (print) | 979-8-3315-4125-5 |
| Publication status | Published - 30 Oct 2024 |
| Peer-reviewed | Yes |
Conference
| Title | 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium |
|---|---|
| Subtitle | Looking towards the future |
| Abbreviated title | BCICTS 2024 |
| Duration | 27 - 30 October 2024 |
| City | Fort Lauderdale |
| Country | United States of America |
External IDs
| Scopus | 85211958053 |
|---|
Keywords
ASJC Scopus subject areas
Keywords
- Heterojunction bipolar transistors, III-V semiconductor materials, Indium phosphide, Integrated circuit modeling, Load modeling, Power amplifiers, Pulse measurements, Radio frequency, Semiconductor device measurement, Semiconductor device modeling, HICUM, SOA, thermal runaway, compact modeling, InP HBT, self-heating, HBT, load-pull