Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Suzanne Lancaster - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Maximilien Remillieux - , NaMLab - Nanoelectronic materials laboratory gGmbH, École supérieure de chimie physique électronique de Lyon (Author)
  • Moritz Engl - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Viktor Havel - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Cláudia Silva - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Xuetao Wang - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either nonidentical or identical pulses, and with time delays between the pulses ranging from 1 μs to 10 s. Experimentally, a method for achieving nonlinear weight update with identical pulses at long programming delays is demonstrated by limiting the switching current via a series resistor. Simulations show that this concept can be expanded to achieve weight update in a 1T1C cell by limiting the switching current through a transistor operating in subthreshold or saturation mode. This leads to a maximum linearity in the weight update of 86% for a dynamic range (maximum switched polarization) of 30 μC/cm2. It is further demonstrated via simulation that engineering the device to achieve a narrower switching peak increases the linearity in scaled devices to >93% for the same range.

Details

Original languageEnglish
Pages (from-to)51109-51117
Number of pages9
JournalACS Applied Materials and Interfaces
Volume16
Issue number38
Publication statusPublished - 25 Sept 2024
Peer-reviewedYes

External IDs

PubMed 39264355
ORCID /0000-0003-3814-0378/work/180371974
Mendeley 7734d9a0-6edc-35bb-8850-54d5ca2c8cd7

Keywords

ASJC Scopus subject areas

Keywords

  • current compliance, ferroelectric HfZrO (HZO), ferroelectric tunnel junction (FTJ), memory window, memristor, multilevel operation, weight update, ferroelectric Hf0.5Zr0.5O2 (HZO)