Vertically Integrated Reconfigurable Nanowire Arrays

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

This letter discusses a feasible variant of vertically integrated reconfigurable field effect transistors (RFET) based on top-down nanowires. The structures were studied by 3-D device simulations. Subdividing the structure into two vertical pillars allows a lean technological realization as well as simple access to the electrodes. In addition of enabling p- and n-FET operations like a horizontal RFET, the device delivers higher performance. We show that by the integration of additional vertical pillars and select gates, a higher device functionality and flexibility in interconnection are provided.

Details

Original languageEnglish
Pages (from-to)1242 - 1245
JournalIEEE electron device letters
Volume39
Issue number8
Publication statusPublished - Aug 2018
Peer-reviewedYes

External IDs

Scopus 85048636013

Keywords