Versatile resistive switching in niobium oxide

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Contributors

Abstract

Resistive switching devices have a high potential for nonvolatile memories and circuit applications. This paper gives a review of the different switching modes in niobium oxide. Abrupt memory switching, threshold switching with or without memory switching and analog switching can be obtained by controlling the stoichiometry of the layer stack either with the use of reactive electrodes, by reactive sputtering with different argon to oxygen ratios or by ion implantation.

Details

Original languageEnglish
Title of host publication2016 IEEE International Symposium on Circuits and Systems (ISCAS)
PublisherIEEE Xplore
Pages381-384
Number of pages4
ISBN (electronic)978-1-4799-5341-7
ISBN (print)978-1-4799-5342-4
Publication statusPublished - 2016
Peer-reviewedYes

Publication series

SeriesIEEE International Symposium on Circuits and Systems (ISCAS)
ISSN0271-4302

External IDs

Scopus 84983400247

Keywords