Variability of nanoscale triple gate FinFETs: Prediction and analysis method

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

  • D. Tassis - , Aristotle University of Thessaloniki (Author)
  • I. Messaris - , Aristotle University of Thessaloniki (Author)
  • N. Fasarakis - , Aristotle University of Thessaloniki (Author)
  • A. Tsormpatzoglou - , Aristotle University of Thessaloniki (Author)
  • S. Nikolaidis - , Aristotle University of Thessaloniki (Author)
  • C. Dimitriadis - , Aristotle University of Thessaloniki (Author)

Abstract

Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.

Details

Original languageEnglish
Title of host publication2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)
PublisherWiley-IEEE Press
Pages710-713
Number of pages4
ISBN (print)978-1-4799-4242-8
Publication statusPublished - 10 Dec 2014
Peer-reviewedYes
Externally publishedYes

Publication series

SeriesIEEE International Conference on Electronics, Circuits and Systems (ICECS)

Conference

Title2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)
Duration7 - 10 December 2014
LocationMarseille, France

External IDs

Scopus 84988233590

Keywords

Keywords

  • Analytical models, Logic gates, FinFETs, Inverters, Integrated circuit modeling, Threshold voltage, Computational modeling