Variability of nanoscale triple gate FinFETs: Prediction and analysis method
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.
Details
Original language | English |
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Title of host publication | 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
Publisher | Wiley-IEEE Press |
Pages | 710-713 |
Number of pages | 4 |
ISBN (print) | 978-1-4799-4242-8 |
Publication status | Published - 10 Dec 2014 |
Peer-reviewed | Yes |
Externally published | Yes |
Publication series
Series | IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
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Conference
Title | 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
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Duration | 7 - 10 December 2014 |
Location | Marseille, France |
External IDs
Scopus | 84988233590 |
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Keywords
Keywords
- Analytical models, Logic gates, FinFETs, Inverters, Integrated circuit modeling, Threshold voltage, Computational modeling