Variability of nanoscale triple gate FinFETs: Prediction and analysis method

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

  • D. Tassis - , Aristotle University of Thessaloniki (Autor:in)
  • I. Messaris - , Aristotle University of Thessaloniki (Autor:in)
  • N. Fasarakis - , Aristotle University of Thessaloniki (Autor:in)
  • A. Tsormpatzoglou - , Aristotle University of Thessaloniki (Autor:in)
  • S. Nikolaidis - , Aristotle University of Thessaloniki (Autor:in)
  • C. Dimitriadis - , Aristotle University of Thessaloniki (Autor:in)

Abstract

Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.

Details

OriginalspracheEnglisch
Titel2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)
Herausgeber (Verlag)Wiley-IEEE Press
Seiten710-713
Seitenumfang4
ISBN (Print)978-1-4799-4242-8
PublikationsstatusVeröffentlicht - 10 Dez. 2014
Peer-Review-StatusJa
Extern publiziertJa

Publikationsreihe

ReiheIEEE International Conference on Electronics, Circuits and Systems (ICECS)

Konferenz

Titel2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)
Dauer7 - 10 Dezember 2014
OrtMarseille, France

Externe IDs

Scopus 84988233590

Schlagworte

Schlagwörter

  • Analytical models, Logic gates, FinFETs, Inverters, Integrated circuit modeling, Threshold voltage, Computational modeling