Variability of nanoscale triple gate FinFETs: Prediction and analysis method
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.
Details
Originalsprache | Englisch |
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Titel | 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
Herausgeber (Verlag) | Wiley-IEEE Press |
Seiten | 710-713 |
Seitenumfang | 4 |
ISBN (Print) | 978-1-4799-4242-8 |
Publikationsstatus | Veröffentlicht - 10 Dez. 2014 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Publikationsreihe
Reihe | IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
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Konferenz
Titel | 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
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Dauer | 7 - 10 Dezember 2014 |
Ort | Marseille, France |
Externe IDs
Scopus | 84988233590 |
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Schlagworte
Schlagwörter
- Analytical models, Logic gates, FinFETs, Inverters, Integrated circuit modeling, Threshold voltage, Computational modeling