Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Christian Roemer - , University of Applied Sciences Mittelhessen (Author)
  • Ghader Darbandy - , University of Applied Sciences Mittelhessen (Author)
  • Mike Schwarz - , University of Applied Sciences Mittelhessen (Author)
  • Jens Trommer - , TUD Dresden University of Technology (Author)
  • Andre Heinzig - , Chair of Nanoelectronics (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, TUD Dresden University of Technology (Author)
  • Walter M. Weber - , TUD Dresden University of Technology (Author)
  • Benjamin Iniguez - , TUD Dresden University of Technology (Author)
  • Alexander Kloes - , University of Applied Sciences Mittelhessen (Author)

Abstract

This paper presents a closed-form, physics-based compact model which is used to calculate the DC characteristics of double gate Schottky barrier field-effect transistors (SBFETs) and reconfigurable field-effect transistors (RFETs) therefore, the model calculates the drain current which consists of field emission through the Schottky barrier and thermionic emission over the barrier. In order to validate the model, this paper shows results for the calculated current in SBFETs and RFETs compared to transfer characteristics of simulated devices and measurements, which show a good agreement.

Details

Original languageEnglish
Title of host publicationLAEDC 2021 - IEEE Latin America Electron Devices Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (electronic)9781665415101
Publication statusPublished - 19 Apr 2021
Peer-reviewedYes

Publication series

Series2021 IEEE Latin America Electron Devices Conference (LAEDC)

Conference

Title3rd IEEE Latin America Electron Devices Conference
Abbreviated titleLAEDC 2021
Conference number3
Duration19 - 21 April 2021
Website
LocationOnline
CountryMexico

External IDs

ORCID /0000-0003-3814-0378/work/142256175

Keywords

ASJC Scopus subject areas

Keywords

  • closed-form, compact modeling, field emission, RFET, SBFET, Schottky barrier, thermionic emission, tunneling current