Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories through Oxygen Doping
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Journal | IEEE transactions on nanotechnology |
Publication status | Published - 2021 |
Peer-reviewed | Yes |
Externally published | Yes |
External IDs
Scopus | 85104259499 |
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