Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories through Oxygen Doping

Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung

Beitragende

  • N. Vasileiadis - , Democritus University of Thrace (Autor:in)
  • P. Karakolis - , Demokritos National Centre for Scientific Research (Autor:in)
  • Panagiotis Mandylas - , Demokritos National Centre for Scientific Research (Autor:in)
  • V. Ioannou-Sougleridis - , Demokritos National Centre for Scientific Research (Autor:in)
  • Pascal Normand - , Demokritos National Centre for Scientific Research (Autor:in)
  • Michele Perego - , Demokritos National Centre for Scientific Research (Autor:in)
  • Philomela Komninou - , Aristotle University of Thessaloniki (Autor:in)
  • V. Ntinas - , Democritus University of Thrace (Autor:in)
  • I.-A. Fyrigos - , Democritus University of Thrace (Autor:in)
  • I.G. Karafyllidis - , Democritus University of Thrace (Autor:in)
  • Georgios Ch Sirakoulis - , Democritus University of Thrace (Autor:in)
  • Panagiotis Dimitrakis - , Demokritos National Centre for Scientific Research (Autor:in)

Details

OriginalspracheEnglisch
FachzeitschriftIEEE transactions on nanotechnology
PublikationsstatusVeröffentlicht - 2021
Peer-Review-StatusJa
Extern publiziertJa

Externe IDs

Scopus 85104259499

Schlagworte